Introduction date:
Technology: Category: Memory:
Max. access time:
Min. write time
Nom. Supp:
Max. Power Dissipation:
History: |
July 1969
P-channel silicon gate MOS technology Fully Decoded
Static Random Access Memory
256 x 1 Bit
1,5 us 800 ns
5 Volt
500 mw
The 1101 was one of the first Intel products. It was
Intel's first
SRAM with MOS (Metal
Oxide
Semiconductor)
technology |