Technical Specification

Introduction date:
Max. access time:
Min. write time
Nom. Supp:
Max. Power Dissipation:

July 1969
P-channel silicon gate MOS technology
Fully Decoded Static Random Access Memory
256 x 1 Bit
1,5 us
800 ns
5 Volt
500 mw

The 1101 was one of the first Intel products. It was Intel's first
SRAM with MOS (
Metal Oxide Semiconductor) technology

C1101A C1101A P1101A
Grey Traces, Intel Logo
Malaysia, 7551 Grey Plastic, Gold Pins

P1101A P1101A  
Grey Plastic Black Plastic, Philippines 7743