Introduction date:
Technology:
Category:
Inputs and Outputs:
Memory:
Max. access time:
Nom. Supp:
Power Dissipation
History:
|
1970
P-channel silicon gate MOS technology
Fully Decoded
Programmable Read Only Memory
DTL and TTL Compatible
256 x 8-bit Static/Dynamic PROM
1.0us
+5V, -9V
700 mW
The Dynamic mode of the 1601/1701
and
1301 refers to the
decoding circuitry and
not the memory cell.Dynamic operation offers higher
speed and lower power dissipation than static
operation.The 1601, 1602, 1701, and
1702 is fabricated with
silicon gate technology. This low threshold technology
allows the design and production of higher performance
MOS circuits and provides a higher functional density on
a monolithic chip than conventional MOS technologies |
