Technical Specification
 

Introduction date:

Technology:
Category:
Inputs and Outputs:
Memory:
Max. access time:
Nom. Supp:
Power Dissipation

History:

 
1970

P-channel silicon gate MOS technology
Fully Decoded Programmable Read Only Memory
DTL and TTL Compatible
256 x 8-bit Static/Dynamic PROM
1.0us
+5V, -9V
700 mW

The Dynamic mode of the 1601/1701 and 1301 refers to the decoding circuitry and
not the memory cell.Dynamic operation offers higher speed and lower power dissipation than static operation.The 1601, 1602, 1701, and 1702 is fabricated with silicon gate technology. This low threshold technology allows the design and production of higher performance MOS circuits and provides a higher functional density on a monolithic chip than conventional MOS technologies

  1601  
   
  Grey Traces, very early date code